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2SJ687
ELECTRICAL CHARACTERISTICS (T A = 25 ° C)
<R>
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
I DSS
I GSS
TEST CONDITIONS
V DS = ? 20 V, V GS = 0 V
V GS = m 12 V, V DS = 0 V
MIN.
TYP.
MAX.
? 10
m 100
UNIT
μ A
nA
<R>
Gate to Source Cut-off Voltage
Note
Forward Transfer Admittance
Drain to Source On-state Resistance
Note
V GS(off)
| y fs |
R DS(on)1
V DS = ? 10 V, I D = ? 1 mA
V DS = ? 10 V, I D = ? 10 A
V GS = ? 4.5 V, I D = ? 10 A
? 0.6
20
? 1.2
5.4
? 1.45
7.0
V
S
m Ω
R DS(on)2
R DS(on)3
V GS = ? 3.0 V, I D = ? 10 A
V GS = ? 2.5 V, I D = ? 10 A
7.1
10.8
9.0
20
m Ω
m Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q G
Q GS
Q GD
V DS = ? 10 V,
V GS = 0 V,
f = 1 MHz
V DD = ? 10 V, I D = ? 10 A,
V GS = ? 4.5 V,
R G = 3 Ω
V DD = ? 16 V,
V GS = ? 4.5 V,
I D = ? 20 A
4400
1070
760
36
220
270
310
57
12
28
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
V F(S-D)
t rr
Q rr
I F = ? 20 A, V GS = 0 V
I F = ? 20 A, V GS = 0 V,
di/dt = ? 100 A/ μ s
0.85
200
240
1.5
V
ns
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
TEST CIRCUIT 2 SWITCHING TIME
PG.
V GS = ? 12 → 0 V
R G = 25 Ω
50 Ω
L
V DD
PG.
R G
D.U.T.
R L
V DD
V GS
Wave Form
V GS ( ? )
10%
0
V GS
90%
V DS ( ? )
?
I D
I AS
BV DSS
V DS
V GS ( ? )
0
V DS
Wave Form
V DS
0
90%
10% 10%
90%
V DD
Starting T ch
τ
τ = 1 μ s
Duty Cycle ≤ 1%
t d(on)
t on
t r t d(off)
t off
t f
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I G = ? 2 mA
R L
2
PG.
50 Ω
V DD
Data Sheet D18719EJ2V0DS
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